Lew Reynolds

Teaching Associate Professor

  • 919-515-7622
  • Engineering Building I (EB1) 3002C

Lew Reynolds was a Distinguished Member of Technical Staff at Bell Laboratories for 23 years prior to coming to NCSU in 2003. He has 30 years experience in the growth, characterization, and device development of III-V compound semiconductors. He has investigated extensively the influence of doping profiles on laser characteristics, developed MOVPE growth techniques for growth on gratings and along mesa sidewalls to minimize defects, and collaborated on the design of high speed photonic devices. More recent efforts have focused on mobility modulation in AlGaN HFET structures, strain relaxation in InGaAs solar cell structures, characterization of GaAsSb nanowires for mid-IR applications, and the pulse width dependence of optical gain in conjugated polymers.

He has been issued eight U.S. patents. His current research interests are compound semiconductor materials and devices, electrical and optical properties, thin film epitaxial growth of group III-nitrides and group II-oxides, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, quantum well structures, electronic and photonic devices, optical properties of conjugated polymers, and nanostructured materials. Currently teach two undergraduate laboratory courses and a graduate one on nanoelectronics. Faculty contact responsible for use of MSE lab service center equipment, for example, SEM, X-ray diffractometer, SQUID VSM, and PPMS.

Education

Ph.D. 1974

Materials Science

University of Virginia

M.S. 1972

Materials Science

University of Virginia

B.S. 1970

Physics

Virginia Military Institute

Research Description

Dr. Reynolds' interests include compound semiconductor materials and devices, epitaxial thin film growth, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, nanoscale materials, and optical properties of conjugated polymers.

Publications

Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy
Sharma, M., Deshmukh, P., Kasanaboina, P., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Semiconductor Science and Technology, 32(12).
Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy
Sharma, M., Deshmukh, P., Kasanaboina, P., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Semiconductor Science and Technology, 32(12).
A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range
Ahmad, E., Karim, M. R., Bin Hafiz, S., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Scientific Reports, 7.
Intrinsic gain and gain degradation modulated by excitation pulse width in a semiconducting conjugated polymer
Lampert, Z. E., Papanikolas, J. M., Lappi, S. E., & Reynolds, C. L. (2017), Optics and Laser Technology, 94, 77-85.
Bandgap tuning in GaAs1-xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy
Ahmad, E., Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Liu, Y., & Iyer, S. (2017), Semiconductor Science and Technology, 32(3).
Te incorporation in GaAs1-xSbx nanowires and p-i-n axial structure
Ahmad, E., Kasanaboina, P. K., Karim, M. R., Sharma, M., Reynolds, C. L., Liu, Y., & Iyer, S. (2016), Semiconductor Science and Technology, 31(12).
Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy
Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Rawdanowicz, T. A., Liu, Y., White, R. M., & Iyer, S. (2016), Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 34(2).
Effect of growth parameters and substrate surface preparation for high-density vertical GaAs/GaAsSb core-shell nanowires on silicon with photoluminescence emission at 1.3 mu m
Kasanaboina, P. K., Ojha, S. K., Sami, S. U., Reynolds, C. L., Liu, Y., & Iyer, S. (2016), Journal of Electronic Materials, 45(4), 2108-2114.
Effects of annealing on GaAs/GaAsSbN/GaAs core-multi-shell nanowires
Kasanaboina, P., Sharma, M., Deshmukh, P., Reynolds, C. L., Liu, Y., & Iyer, S. (2016), Nanoscale Research Letters, 11.
Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy
Kasanaboina, P. K., Ojha, S. K., Sami, S. U., Reynolds, C. L., Liu, Y., & Iyer, S. (2015), Semiconductor Science and Technology, 30(10).

View all publications via NC State Libraries

Grants

Dilute Nitride GaAsSbN/GaAs Nanowires for Infrared Photodectors
US Navy-Office Of Naval Research(6/01/16 - 5/31/19)
Identification/Quantification of Low Level Recombination Centers in Silicon
NCSU Silicon Solar Consortium (SiSoC) Research Center(12/01/14 - 12/31/16)
A Study of GaAsSb Nanowires for Photodetectors
US Army - Army Research Office(4/27/15 - 10/26/17)
Interfacial Induced Properties in GaN Devices
National Science Foundation (NSF)(9/01/13 - 8/31/18)
Proposal for Phase II of the SiSoC NSF I/UCRC: Enhancing the Manufacturability of Silicon Solar Cells
National Science Foundation (NSF)(10/01/13 - 9/30/18)
A study of GaAsSb Nanowires by Molecular Beam Epitaxy for Near IR Applications
US Army - Army Research Office(6/15/11 - 6/14/15)
SiSoC Associate Membership - MEMC
SunEdison, Inc. formerly MEMC Electronic Materials Co.(1/01/08 - 12/31/15)