James LeBeau

Associate Professor

Associate Director, Analytical Instrumentation Facility
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  • Engineering Building I (EB1) 3076A
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LeBeau’s research group focuses on applying and developing transmission electron microscopy techniques to determine the atomic structure of material defects, thus providing insight into observed properties. This is of particular importance as electronic devices scale to ever vanishingly small dimensions, when the detailed arrangement of atoms at interfaces begins to critically influence material properties. One technique, atomic resolution high-angle annular dark-field (HAADF) scanning transmission electron microscopy, is emphasized because the images are directly interpretable and the intensities depend sensitively upon the number and type of atoms present. Having shown that HAADF images from experiment agree quantitatively with simulations, the LeBeau group is interested in exploring the detailed image intensities to provide information about the atomic structure without the need for calibration standards.

Dr. LeBeau’s research interests include scanning transmission electron microscopy; atomic configuration at defects; interfaces between heterogeneous materials; quantitative imaging and diffraction in electron microscopy.

Education

Ph.D. 2010

Materials Science and Engineering

University of California at Santa Barbara

B.S. 2006

Materials Science and Engineering

Rensselaer Polytechnic Institute